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X-ray intensity oscillations occurring during growth of Ge on Ge(111)-a comparison with RHEED

van Silfhoutl, R. G., Frenkeni, J. W. M., van der Veeni, J. F., Ferrer, S., Johnson, A., Derbyshire, H., Norris, C. and MacDonald, John Emyr 1989. X-ray intensity oscillations occurring during growth of Ge on Ge(111)-a comparison with RHEED. Journal of Physics: Condensed Matter 1 (Supp B) , SB213-SB214. 10.1088/0953-8984/1/SB/047

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Abstract

The growth of Ge on Ge(111) has been studied in situ by X-ray diffraction and reflectivity. For well defined geometries the scattered X-ray intensity is extremely sensitive to atomic-scale surface morphology. For substrate temperatures up to 200 degrees C oscillations in the reflected and diffracted yields are observed, which are indicative for two-dimensional nucleation. Curves showing reflectivity versus perpendicular momentum transfer Qz yield the height distribution of the islands. The use of X-rays allows for a straightforward 'single-scattering' interpretation of the intensities, as opposed to the use of reflection high-energy electron diffraction where multiple-scattering effects have to be taken into account.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0953-8984
Last Modified: 04 Jun 2017 05:03
URI: http://orca.cf.ac.uk/id/eprint/47809

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