Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Partial ionization of cesium atoms at point defects over polycrystalline magnesium oxide

Chiesa, Mario, Paganini, Maria Cristina, Giamello, Elio and Murphy, Damien Martin 2001. Partial ionization of cesium atoms at point defects over polycrystalline magnesium oxide. Journal of Physical Chemistry B 105 (43) , pp. 10457-10460. 10.1021/jp0118470

Full text not available from this repository.


Evaporation of Cs atoms onto dehydrated polycrystalline MgO leads to the formation of surface color centers in correspondence of surface point defects. EPR spectroscopy has revealed that the adsorbed Cs atoms are partially ionized, and a fraction of the electron spin density is delocalized onto a surface oxygen vacancy or trap. The observed defect can thus be written as Csä+(trap) ä- . These results give evidence of the preferential interaction of the metal atoms with specific surface defect sites in the early stages of the metal-support interaction. The reaction of these centers with molecular oxygen leads to bleaching of the surface with formation of the O2 - superoxide radical anion. A fraction of the adsorbed superoxide ions are adsorbed on “regular” Mg2+ sites while the remaining ones are adsorbed on top of Cs+ ions.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Chemistry
Subjects: Q Science > QD Chemistry
Publisher: American Chemical Society
ISSN: 1520-6106
Last Modified: 04 Jun 2017 05:06

Citation Data

Cited 10 times in Google Scholar. View in Google Scholar

Cited 11 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item