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Excitonic state in quantum wells formed from "above-barrier" electronic states

Muljarov, Egor A., Sibel'din, N. N., Skorikov, M. L., Tsvetkov, V. A. and Etienne, B. 1999. Excitonic state in quantum wells formed from "above-barrier" electronic states. JETP Letters 70 (9) , pp. 621-627. 10.1134/1.568225

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Abstract

Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole states (specifically, excitation lines of excitons formed by an electron localized in a QW and a free heavy hole) have been observed in the photoluminescence excitation spectra of GaAs/Al0.05Ga0.95As structures with quantum wells (QWs), each containing one single-particle size-quantization level for charge carriers of each type. A computational method is proposed that permits finding the binding energy and wave functions of excitons in QWs taking the Coulomb potential into account self-consistently. The computed values of the excitonic transition energies agree quite well with the experimental results.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Publisher: Nauka/Interperiodica
ISSN: 0021-3640
Last Modified: 04 Jun 2017 05:07
URI: http://orca.cf.ac.uk/id/eprint/48558

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