Origin of quantum ring formation during droplet epitaxy

Zhou, Z. Y., Zheng, C. X., Tang, Wen-Xin, Tersoff, J. and Jesson, David E. ORCID: https://orcid.org/0000-0003-0897-1445 2013. Origin of quantum ring formation during droplet epitaxy. Physical Review Letters 111 (3) , 036102. 10.1103/PhysRevLett.111.036102

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Abstract

Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge, while outer rings result from the reaction of Ga and As atoms diffusing along the surface. The observed variety of morphologies primarily reflects relative changes in the outer rings with temperature and As flux.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0031-9007
Last Modified:	25 Oct 2022 08:02
URI:	https://orca.cardiff.ac.uk/id/eprint/51188

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