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The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

Thomson, John Duncan, Pope, Iestyn, Smowton, Peter Michael, Blood, Peter, Lynch, R. J., Hill, G., Wang, T. and Parbrook, P. J. 2005. The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. Presented at: Physics and simulation of optoelectronic devices XIII, San Jose, USA, 24-27 January 2005. Published in: Osinski, Marek., Henneberger, Fritz and Amano, Hiroshi eds. Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE , vol. 5722. Bellingham: SPIE, pp. 425-430. 10.1117/12.591897

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Abstract

We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Gallium nitride; Indium gallium nitride; Light emitting diodes; Quantum wells; Simulations; Diodes
Publisher: SPIE
ISBN: 9780819456960
Last Modified: 04 Jun 2017 05:45
URI: http://orca.cf.ac.uk/id/eprint/53201

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