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Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Zanella, F., Marjanović, N., Ferrini, R., Gold, H., Haase, A., Fian, A., Stadlober, B., Müller, R., Genoe, J., Hirshy, Hassan, Drost, A., König, M., Lee, K.-D., Ring, J., Prétôt, R., Enz, C. C. and Sallese, J.-M. 2013. Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors. Organic Electronics 14 (11) , pp. 2756-2761. 10.1016/j.orgel.2013.07.035

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Abstract

Sub-micrometer channel length (0.5 μm) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4-in. plastic foils using a p-type sublimated small molecule (pentacene) as semiconductor. Field-effect mobilities, in saturation, between 0.1 and 1 cm2/Vs were obtained not only for the supermicron OTFTs but also for the submicron OTFTs. Those devices were used to select a model based on the “TFT Generic Charge Drift model” which works well for a broad range of channel lengths including the submicron OTFTs. We show that these OTFTs can be accurately modeled, thus giving access to complex circuit simulations and design.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Self-alignment; NIL; Submicron channel OTFT; OFET; Model
Publisher: Elsevier
ISSN: 1566-1199
Last Modified: 17 Jun 2017 08:47
URI: http://orca.cf.ac.uk/id/eprint/57063

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