Optimisation of high power AlGaInP laser diodes for optical storage applications

Elliott, Stella, Berry, G. and Smowton, Peter Michael 2006. Optimisation of high power AlGaInP laser diodes for optical storage applications. IEE Proceedings Optoelectronics 153 (6) , pp. 321-325. 10.1049/ip-opt:20060050

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Abstract

The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18deg. T0 is increased from 51 to 65 K (20-70degC) for the expanded mode structure for 320-mum long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institution of Engineering and Technology
ISSN:	1350-2433
Last Modified:	05 Nov 2019 04:05
URI:	http://orca.cf.ac.uk/id/eprint/59515

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