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Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Sandall, I. C., Walker, C. L., Hopkinson, M., Smowton, Peter Michael, Liu, H. Y. and Mowbray, D. J. 2006. Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE Proceedings Optoelectronics 153 (6) , pp. 316-320. 10.1049/ip-opt:20060042

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Abstract

The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 mum. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 mum long devices at 300 K.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institution of Engineering and Technology
ISSN: 1350-2433
Last Modified: 04 Jun 2017 06:24
URI: http://orca.cf.ac.uk/id/eprint/59516

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