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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

Sandall, I. C., Smowton, Peter Michael, Walker, C. L., Liu, H. Y., Hopkinson, M. and Mowbray, D. J. 2006. Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE Photonics Technology Letters 18 (8) , pp. 965-967. 10.1109/LPT.2006.873560

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Abstract

We measure, in real units, the radiative and total current density in high performance 1.3-μm InAs quantum-dot-laser structures. Despite very low threshold current densities, significant nonradiative recombination (∼80% of the total recombination) occurs at 300 K with an increasing fraction at higher current density and higher temperature. Two nonradiative processes are identified; the first increases approximately linearly with the radiative recombination while the second increases at a faster rate and is associated with the loss of carriers to either excited dot states or the wetting layer.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISSN: 1041-1135
Last Modified: 04 Jun 2017 06:24
URI: http://orca.cf.ac.uk/id/eprint/59521

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