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Auger heating of carriers in GaAs / AlAs heterostructures

Borri, Paola, Ceccherini, S., Gurioli, M. and Bogani, F. 1997. Auger heating of carriers in GaAs / AlAs heterostructures. Solid State Communications 103 (2) , pp. 77-81. 10.1016/S0038-1098(97)00150-6

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Abstract

The photoluminescence of GaAs / AlAs source multiple quantum wells structures under optical ps excitation is investigated for carrier densities in the range 1018−4 × 1019 cm−3 with frequency and time-resolved spectroscopic techniques. The measurements give a direct evidence of the occurrence in the sample of carrier heating. This energy up-conversion gives rise to photoluminescence from the states near the Fermi level whose intensity and time evolution depend on the carrier density in a strongly non-linear way. The observed behaviour can be explained introducing in the carrier dynamics an up-conversion mechanism due to Auger-like processes.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: A quantum wells; A semiconductors; D electron-electron interactions; E time-resolved optical spectroscopies
Publisher: Elsevier
ISSN: 0038-1098
Last Modified: 02 May 2019 11:18
URI: http://orca.cf.ac.uk/id/eprint/59663

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