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Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures

Borri, Paola, Gurioli, M., Colocci, M., Martelli, F., Capizzi, M., Patane, A. and Polimeni, A. 1996. Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures. Journal of Applied Physics 80 (5) , pp. 3011-3016. 10.1063/1.363160

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Abstract

A large set of InGaAs/GaAs quantum well structures was investigated by means of continuous wave photoluminescence(PL) and photoluminescence excitation spectroscopy. Strong photomodulation effects are observed in PL, namely, a strong sensitivity to the excitation energy and strong changes in the line shape when resonant and nonresonant excitations are used together. Correspondingly, the exciton emission exhibits a doublet structure and the excitation spectra, as detected by monitoring the emission at the two peak energies of the PL doublet, show quite different profiles, with peaks and/or dips not directly related to absorption resonances. On the grounds of time‐resolved experiments it is shown that band‐bending modifications, due to trapping of free carriers at interface defects, account for the observed photomodulation.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Last Modified: 02 May 2019 11:19
URI: http://orca.cf.ac.uk/id/eprint/59702

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