Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

Martelli, F., Polimeni, A., Patanè, A., Capizzi, M., Borri, Paola, Gurioli, M., Colocci, M., Bosacchi, A. and Franchi, S. 1996. Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells. Physical Review B 53 (11) , pp. 7421-7425. 10.1103/PhysRevB.53.7421

Full text not available from this repository.

Abstract

Photoluminescence measurements in InGaAs/GaAs quantum wells, both doped and undoped, have provided evidence of a bound exciton of intrinsic origin with peculiar properties. The intensity of this bound exciton exhibits an unusual dependence on the exciting power density. Its relative strength with respect to the free exciton is strongly modified by small changes of the excitation wavelength. Its linewidth closely matches that measured for the heavy-hole free exciton, independent of well width and indium concentration. These features lead one to conclude that the intrinsic bound exciton is localized by a photoassisted interfacial roughness. Possible microscopic origins of such a localizing potential are also tentatively given.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 02 May 2019 11:19
URI: http://orca.cf.ac.uk/id/eprint/59703

Citation Data

Cited 23 times in Google Scholar. View in Google Scholar

Cited 21 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item