Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Formation and relaxation of exciton-carbon acceptor complexes in GaAs

Grassi Alessi, M., Patanè, A., Polimeni, A., Capizzi, M., Martelli, F., Borri, Paola, Gurioli, M. and Colocci, M. 1997. Formation and relaxation of exciton-carbon acceptor complexes in GaAs. Physical Review B 56 (7) , pp. 3834-3837. 10.1103/PhysRevB.56.3834

Full text not available from this repository.

Abstract

Photoluminescence excitation (PLE) measurements have been performed in several GaAs-based structures by monitoring the electron-carbon acceptor and the exciton bound to carbon recombinations. In both cases we show that the separate capture of free carriers makes the main contribution to the electron-carbon transition and to the formation of the bound exciton. A dip is indeed observed in the PLE spectra at the energy of the free exciton. The contribution of the bound exciton relaxation to the two-hole transition is pointed out.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 02 May 2019 11:19
URI: http://orca.cf.ac.uk/id/eprint/59704

Citation Data

Cited 1 time in Google Scholar. View in Google Scholar

Cited 3 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item