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Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells

Chastaingt, B., Gurioli, M., Borri, Paola, Colocci, M., Neu, G., Deparis, C., Massies, J. and Martinez-Pastor, J. 1997. Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells. Physical Review B 55 (4) , pp. 2393-2400. 10.1103/PhysRevB.55.2393

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Abstract

We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/AlxGa1-xAs quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I–type-II character of the transition.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Physical Society
ISSN: 0163-1829
Last Modified: 02 May 2019 11:19
URI: http://orca.cf.ac.uk/id/eprint/59716

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