Exciton formation and relaxation in GaAs epilayers

Gurioli, M., Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314, Colocci, M., Gulia, M., Rossi, F., Molinari, E., Selbmann, P. and Lugli, P. 1998. Exciton formation and relaxation in GaAs epilayers. Physical Review B 58 (20) , R13403-R13406. 10.1103/PhysRevB.58.R13403

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Abstract

Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Biosciences Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Physical Society
ISSN:	0163-1829
Last Modified:	25 Oct 2022 09:43
URI:	https://orca.cardiff.ac.uk/id/eprint/59745

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