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Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

Shangina, E. L., Smirnov, K. V., Morozov, Dmitry L., Kovalyuk, V. V., Gol'tsman, G. N., Verevkin, A. A. and Toropov, A. I. 2010. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semiconductors 44 (11) , pp. 1427-1429. 10.1134/S1063782610110096

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Abstract

The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n s −0.5 due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Uncontrolled Keywords: Physics; magnetism; magnetic materials.
Additional Information: Original Russian Text E.L. Shangina, K.V. Smirnov, D.V. Morozov, V.V. Kovalyuk, G.N. Gol’tsman, A.A. Verevkin, A.I. Toropov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1475–1477.
Publisher: Springer
ISSN: 1063-7826
Last Modified: 04 Jun 2017 06:29
URI: http://orca.cf.ac.uk/id/eprint/60911

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