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Frequency scalable large signal transistor behavioral model based on admittance domain formulation

Koh, M., Bell, James Joseph, Williams, D., Patterson, A., Lees, Jonathan, Root, D. E. and Tasker, Paul J. 2014. Frequency scalable large signal transistor behavioral model based on admittance domain formulation. Presented at: International Microwave Symposium, Tampa, Florida, 1-6 June 2014. 2014 IEEE MTT-S International Microwave Symposium (IMS). Picastaway, NJ: IEEE, pp. 1-3. 10.1109/MWSYM.2014.6848287

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Abstract

This paper introduces the first formulation and approach that enables measurement based non-linear behavioral look-up table transistor models to be frequency scalable. The experimental results on a M/A-COM GaN HFET from 2 GHz to 8 GHz, support theoretical analysis that frequency domain behavioral models defined in the admittance domain have frequency scalable model coefficients. Load-pull results indicate that the model can accurately predict non-linear behavior at frequencies where the large signal measurements were not performed.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Publisher: IEEE
Last Modified: 04 Jun 2017 06:45
URI: http://orca.cf.ac.uk/id/eprint/64356

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