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Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces

Bhatti, Q. A. and Matthai, Clarence Cherian 1998. Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces. Thin Solid Films 318 (1-2) , pp. 46-51. 10.1016/S0040-6090(97)01136-X

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Abstract

We have performed molecular dynamics simulations to determine the adsorption and diffusion activation energies of Si and C adatoms on the single stepped surfaces, SA, SB(n) and SB(b), of SiC(001). We find that Si adatoms, unlike C adatoms, have to overcome a barrier at the step edge before it can diffuse from the upper to lower ledge. From an examination of C adatom diffusion events, we conclude that layer by layer growth is most likely when there are SA type steps

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Adatom dynamics; SiC(001) surfaces; Simulations.
Publisher: Elsevier
ISSN: 0040-6090
Last Modified: 04 Jun 2017 06:48
URI: http://orca.cf.ac.uk/id/eprint/64911

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