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A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces

Anyele, H. T., Cafolla, A. A. and Matthai, Clarence Cherian 1993. A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces. Applied Surface Science 70-71 (2) , pp. 433-437. 10.1016/0169-4332(93)90555-P

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Abstract

Self-consistent electronic structure calculations have been performed on the Sn/Si(111) (√3 × √3) and (2√3 × 2√3) reconstructed surfaces and the Schottky barrier height deduced. The geometric structure of these surfaces was determined by molecular dynamics simulations with the interaction between atoms being described by a valence force field model. We find that the barrier height at the (√3 × √3) interface is lower than that at the (2√3 × 2√3) interface by 0.27 eV. This is in good agreement with experiment

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0169-4332
Last Modified: 04 Jun 2017 06:48
URI: http://orca.cf.ac.uk/id/eprint/64991

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