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The electronic structure of Si(100) and As/Si(100) surfaces

Shen, T. -H. and Matthai, Clarence Cherian 1991. The electronic structure of Si(100) and As/Si(100) surfaces. Journal of Physics: Condensed Matter 3 (32) , pp. 6169-6172. 10.1088/0953-8984/3/32/022

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Abstract

The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tight binding method in the extended Huckel approximation. The results are compared with the reconstructed silicon (100) surface, and the passivation of the silicon surface is discussed in context of the authors results.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0953-8984
Last Modified: 04 Jun 2017 06:49
URI: http://orca.cf.ac.uk/id/eprint/65070

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