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Electronic structure of the Si6/(Si0.5Ge0.5)6 001 superlattices

Bass, J. M. and Matthai, Clarence Cherian 1991. Electronic structure of the Si6/(Si0.5Ge0.5)6 001 superlattices. Semiconductor Science and Technology 6 (2) , pp. 109-111. 10.1088/0268-1242/6/2/007

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Abstract

Using ab initio pseudopotentials the authors calculated the electronic structure of the Si6/(Si0.5Ge0.5)6 superlattices strained to Si, Si0.75Ge0.25 and Si0.5Ge0.5 (001) orientated substrates. They found that none of these materials displays direct gaps. They also calculated the valence band offsets of the Si/Si0.5Ge0.5(001) interface for different strain configurations and found them not to be simply one half of those of the Si/Ge interface for the same strains.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institute of Physics
ISSN: 0268-1242
Last Modified: 04 Jun 2017 06:49
URI: http://orca.cf.ac.uk/id/eprint/65075

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