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The Schottky barrier height at the CoSi2/Si(111) interface

Rees, N. V. and Matthai, Clarence Cherian 1988. The Schottky barrier height at the CoSi2/Si(111) interface. Journal of Physics C: Solid State Physics 21 (27) , L981-L984. 10.1088/0022-3719/21/27/002

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Abstract

The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with eightfold-coordinated Co atoms at the interface

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 0022-3719
Last Modified: 04 Jun 2017 06:50
URI: http://orca.cf.ac.uk/id/eprint/65185

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