Matthai, Clarence Cherian, Moran, G. J. and Morrison, I. 2011. Computer simulation of Si and C atoms on SiC surfaces. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. Materials Research Society Conference Proceedings Cambridge University Press, pp. 21-26. 10.1557/PROC-339-21 |
Official URL: http://dx.doi.org/10.1557/PROC-339-21
Abstract
The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Cambridge University Press |
ISSN: | 19464274 |
Last Modified: | 04 Jun 2017 06:50 |
URI: | http://orca.cf.ac.uk/id/eprint/65310 |
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