Computer simulation of Si and C atoms on SiC surfaces

Matthai, Clarence Cherian, Moran, G. J. and Morrison, I. 2011. Computer simulation of Si and C atoms on SiC surfaces. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. Materials Research Society Conference Proceedings Cambridge University Press, pp. 21-26. 10.1557/PROC-339-21

Full text not available from this repository.

Abstract

The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Cambridge University Press
ISSN:	19464274
Last Modified:	04 Jun 2017 06:50
URI:	http://orca.cf.ac.uk/id/eprint/65310

Citation Data

Actions (repository staff only)

Edit Item