Influence of the host lattice on the O-H interaction in II-VI semiconductors

Felici, M., Polimeni, A., Scordo, A., Masia, Francesco ORCID: https://orcid.org/0000-0003-4958-410X, Frova, A., Capizzi, M., Nabetani, Y., Okuno, T., Aoki, K., Kato, T., Matsumoto, T. and Hirai, T. 2007. Influence of the host lattice on the O-H interaction in II-VI semiconductors. Aip Conference Proceedings 893 , pp. 327-328.

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Abstract

We investigated the optical properties of ZnTe:O before and after atomic H irradiation. The disappearance of all O-induced effects upon hydrogenation is a clear sign of the existence of strong O-H interactions in the material. This behavior strikingly contrasts with that observed in ZnSe1-xOx, where no effect of H irradiation on the large, O-induced band-gap bowing could be observed. These observations point out to the key role played by the host lattice in determining the properties of the isoelectronic O impurity in II-VI semiconductors. In turn, these properties have a deep influence on the strength of O-H interactions in this class of materials.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	AIP
ISSN:	0094-243X
Last Modified:	27 Oct 2022 10:14
URI:	https://orca.cardiff.ac.uk/id/eprint/69452

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