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Electron-Phonon energy relaxation time in thin strongly disordered titanium nitride films

Kardakova, A. I., Coumou, P. C. J. J., Finkel, M. I., Morozov, Dmitry, An, P. P., Goltsman, G. N. and Klapwijk, T. M. 2015. Electron-Phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Transactions on Applied Superconductivity 25 (3) , 2400404. 10.1109/TASC.2014.2364516

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Abstract

We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τeph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T-3 temperature dependence, which are consistent with values of τeph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
ISSN: 1051-8223
Last Modified: 03 Sep 2019 14:27
URI: http://orca.cf.ac.uk/id/eprint/69781

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