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Self-trapped excitons in semiconductor quantum wires inside a polar dielectric matrix

Muljarov, Egor A. and Tikhodeev, S. G. 1997. Self-trapped excitons in semiconductor quantum wires inside a polar dielectric matrix. physica status solidi (a) 164 (1) , pp. 393-396. 10.1002/1521-396X(199711)164:1<393::AID-PSSA393>3.0.CO;2-H

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Abstract

We analyze theoretically the conditions of the exciton self-trapping in a thin semiconductor wire, imbedded into a polar dielectric matrix. We show that in such systems the exciton self-trapping can be strongly enhanced due to (i) increased exciton–phonon coupling and (ii) possibility of spatial charge separation in the exciton. We use the standard adiabatic polaron approach to evaluate the effective exciton Hamiltonian, which takes into account the exciton–optical phonon interaction as well as the electric field renormalization due to image charges, and calculate variationally the self-trapped exciton binding energy and the Stokes shift between the peak energies in the optical absorption and emission.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Wiley
ISSN: 1862-6319
Related URLs:
Last Modified: 04 Jun 2017 08:03
URI: http://orca.cf.ac.uk/id/eprint/72197

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