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700nm InP quantum dot lasers with strained confinement layers

Elliott, Stella N., Smowton, Peter Michael and Krysa, Andrey B. 2012. 700nm InP quantum dot lasers with strained confinement layers. Presented at: 23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, CA, USA, 7-10 Oct 2012. Proceedings of 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE, pp. 62-63. 10.1109/ISLC.2012.6348335

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Abstract

InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250Acm-2 at 20° C and 80° C respectively are produced by reducing carrier population and recombination through strain engineering.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 9781457708282
Last Modified: 05 Nov 2019 04:05
URI: http://orca.cf.ac.uk/id/eprint/73322

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