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Improved laser performance in NIR InP dot based structures with strained layers

Elliott, Stella, Kasim, Makarimi, Smowton, Peter Michael and Krysa, Andrey B. 2014. Improved laser performance in NIR InP dot based structures with strained layers. Presented at: 2014 International Semiconductor Laser Conference (ISLC), Palma de Mallorca, Spain, 7-10 Sept 2014. Proceedings of the 2014 International Semiconductor Laser Conference (ISLC). IEEE, pp. 86-87. 10.1109/ISLC.2014.176

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Abstract

We achieve lower elevated temperature threshold current densities: 250Acm-2 (80°C) and 575Acm-2 (125°C) (2mm lasers) for increased strained layer Ga fraction of 0.58 with 714nm lasing in 1mm devices (all broad area uncoated facets).

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISBN: 9781479957217
Last Modified: 05 Nov 2019 04:05
URI: http://orca.cf.ac.uk/id/eprint/73323

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