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A theoretical study of band offset modification at the InAs/GaAs interface

Shen, T-H. and Matthai, Clarence Cherian 1992. A theoretical study of band offset modification at the InAs/GaAs interface. Presented at: 1992 MRS Spring Meeting & Exhibit. Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect, San Francisco, CA, 29 April - 1 May 1992. Published in: Nolte, D. D., Haegel, N. M. and Goossen, K. W. eds. Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity, and the Photorefractive Effect : Symposium Held April 29-May (MRS Symposium proceedings). MRS Symposium proceedings Pittsburgh: Cambridge University Press, 10.1557/PROC-261-81

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Abstract

We present the results of pseudopotential calculations on the InAs/GaAs system with and without interlayers of Ge at the interface. We find that the band alignment depends critically on the positioning of the interlayer at the interface and on the number of monolayers substituted. The results can be explained with recourse to a simple model based on charge transfer between the atoms across the interface.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Cambridge University Press
ISBN: 9781558991569
ISSN: 1946-4274
Last Modified: 04 Jun 2017 08:20
URI: http://orca.cf.ac.uk/id/eprint/76137

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