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Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

Hughes, A., Shen, T-H. and Matthai, Clarence Cherian 2011. Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System. Presented at: 1992 MRS Spring Meeting - Symposium B . Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing, San Francisco, CA, 27-29 April 1992. Published in: Helms, C. Robert, Hirose, Masataka and Nemanich, Robert J. eds. Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 192, San Francisco, California, U.S.A. Materials Research Society symposium proceedings , vol. 259. Pittsburgh, Pa: Cambridge University Press, 10.1557/PROC-259-505

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Abstract

The electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Cambridge University Press
ISBN: 9781558991545
ISSN: 1946-4274
Last Modified: 04 Jun 2017 08:20
URI: http://orca.cf.ac.uk/id/eprint/76141

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