Realisation of a Novel GaN/ InN Heterostructure FET Device

Alexandrov, D., Perks, Richard Marc, Butcher, K. S. A., Hirshy, H., Kettle, J. and Wintrebert-Fouquet, M. 2006. Realisation of a Novel GaN/ InN Heterostructure FET Device. Presented at: Lester Eastman Conference on High Performance Devices, New York, USA, pp. 95-96.

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Item Type:	Conference or Workshop Item (Paper)
Schools:	Engineering
Last Modified:	04 Jun 2017 02:02
URI:	http://orca.cf.ac.uk/id/eprint/7822

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