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High-quality InAsSb nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition

Farrell, Alan C., Lee, Wook-Jae, Senanayake, Pradeep, Haddad, Michael A., Prikhodko, Sergey V. and Huffaker, Diana L. 2015. High-quality InAsSb nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition. Nano Letters 15 (10) , pp. 6614-6619. 10.1021/acs.nanolett.5b02389

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Abstract

We report on the first demonstration of InAs1–xSbx nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Engineering
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: American Chemical Society
ISSN: 1530-6984
Last Modified: 23 Apr 2020 11:15
URI: http://orca.cf.ac.uk/id/eprint/89709

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