L g=80 -nm trigate quantum-well In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 gate-stack

Kim, Tae-Woo, Koh, Dong-Hyi, Shin, Chan-Soo, Park, Won-Kyu, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Hobbs, Chris, Maszara, Witek P. and Kim, Dae-Hyun 2015. L g=80 -nm trigate quantum-well In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 gate-stack. IEEE Electron Device Letters 36 (3) , pp. 223-225. 10.1109/LED.2015.2393554

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Abstract

Abstract—We report on Lg = 80-nm trigate quantum- well InGaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer Al2O3/HfO2 (0.7/2 nm) gate-stack by atomic layer deposition and dry etched In0.53Ga0.47As fin. An Lg = 80-nm trigate MOSFET with fin-width (Wfin) = 30 nm and fin-height (Hfin) = 20 nm exhibits excellent performance, such as ON-resistance (RON) = 220 -μm, subthreshold swing (S) = 82 mV/dec, and drain-induced- barrier lowering = 10 mV/V at VDS = 0.5 V. Besides, the device exhibits record values of maximum transconductance (gm_max) = 1800 μS/μm and ION = 0.41 mA/μm at VDS = 0.5 V, and a record combination of gm_max and S in any III–V nonplanar MOSFET technology.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	11 May 2016
Date of Acceptance:	13 January 2015
Last Modified:	01 Nov 2022 10:14
URI:	https://orca.cardiff.ac.uk/id/eprint/90778

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