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Axial diffusion barriers in near-infrared nanopillar LEDs

Scofield, Adam C., Lin, Andrew, Haddad, Michael and Huffaker, Diana L. 2014. Axial diffusion barriers in near-infrared nanopillar LEDs. Nano Letters 14 (11) , pp. 6037-6041. 10.1021/nl501022v

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The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: American Chemical Society
ISSN: 1530-6984
Last Modified: 23 Apr 2020 11:00

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