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InN/InGaN multiple quantum Wells emitting at 1.5 mu grown by molecular beam epitaxy

Grandal, Javier, Pereiro Viterbo, Juan, Bengoechea-Encabo, Ana, Fernandez-Garrido, Sergio, Sanchez-Garcia, Miguel Angel, Munoz, Elias, Calleja, Enrique, Luna, Esperanza and Trampert, Achim 2011. InN/InGaN multiple quantum Wells emitting at 1.5 mu grown by molecular beam epitaxy. Applied Physics Letters 98 , 061901. 10.1063/1.3552195

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This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 1077-3118
Last Modified: 15 Nov 2019 14:45

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