Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, O'Brian, Brendan, Herman, Joshua L., Vivekanand, Saikumar, Papa Rao, Satyavolu S. and Oktyabrsky, Serge R. 2016. Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping. Journal of Applied Physics 120 (8) , 085308. 10.1063/1.4961522

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Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	PDF uploaded in accordance with publisher's polices at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 4.11.16).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	4 November 2016
Date of Acceptance:	10 August 2016
Last Modified:	07 Nov 2023 01:34
URI:	https://orca.cardiff.ac.uk/id/eprint/94344

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