Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metaloxide-semiconductor device

Koh, Donghyi, Shin, Seung Heon, Ahn, Jaehyun, Sonde, Sushant, Kwon, Hyuk-Min, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Kim, Dae-Hyun, Kim, Tae-Woo and Banerjee, Sanjay K. 2015. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metaloxide-semiconductor device. Applied Physics Letters 107 (18) , 183509-1-183509-3. 10.1063/1.4935248

Full text not available from this repository.
Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of Acceptance: 24 October 2015
Last Modified: 01 Nov 2022 11:15
URI: https://orca.cardiff.ac.uk/id/eprint/94345

Citation Data

Cited 4 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item