Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, Lee, Rinus T.P., Norvilas, Aras, Huang, Gensheng, Herman, Joshua L., Hill, Richard J.W. and Rao, Satyavolu S. Papa 2015. Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers. Journal of Crystal Growth 426 , pp. 243-247. 10.1016/j.jcrysgro.2015.05.007

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Abstract

Tellurium has several remarkable properties that make it an attractive n-type dopant in III–V semiconductors, namely high incorporation and activation efficiency resulting in high achievable doping levels in combination with a low diffusion coefficient. However, it suffers from a strong memory effect related to its surfactant behavior that inhibits sharp junction interface formation. We report Te-doped In0.53Ga0.47As with an electron density of 8×1019 cm−3. The layers were grown by MOCVD on 300 mm Si wafers and were characterized by SIMS, XRD, Hall effect, and sheet resistivity mapping. The high active electron density and the excellent uniformity over the wafer surface make this process promising for selective regrowth of highly doped source and drain in VLSI.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Uncontrolled Keywords:	A1. Doping; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials
Publisher:	Elsevier
ISSN:	0022-0248
Date of Acceptance:	8 May 2015
Last Modified:	01 Nov 2022 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/94347

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