Surface zeta potential and diamond seeding on gallium nitride films

Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Thomas, Evan L. H., Middleton, Callum, Gines, Laia ORCID: https://orcid.org/0000-0001-9980-054X, Griffiths, James T., Kappers, Menno J., Oliver, Rachel A., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Goff, Lucy E., Lynch, Stephen A. ORCID: https://orcid.org/0000-0001-9818-2284, Kuball, Martin and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2017. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2 (10) , pp. 7275-7280. 10.1021/acsomega.7b01069

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Abstract

Measurement of zeta potential of Ga-face and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows a more negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond �lms on GaN seeded with H-terminated diamond seeds produced fully coalesced �lms con�rming a seeding density in excess of 1011 cm

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy Engineering
Subjects:	Q Science > QC Physics
Additional Information:	This is an open access article published under a Creative Commons Attribution (CC-BY)License, which permits unrestricted use, distribution and reproduction in any medium,provided the author and source are cited.
Publisher:	American Chemical Society
ISSN:	2470-1343
Funders:	EPSRC
Date of First Compliant Deposit:	9 October 2017
Date of Acceptance:	6 October 2017
Last Modified:	06 Jan 2024 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/105303

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