Ballistic transport effects in a sub-micron InSb quantum well cross structure

Gilbertson, A. M., Fearn, M., Kormányos, A., Read, Daniel ORCID: https://orcid.org/0000-0002-4178-4986, Lambert, C. J., Buckle, L., Ashley, T., Solin, S. A., Cohen, L. F., Ihm, Jisoon and Cheong, Hyeonsik 2011. Ballistic transport effects in a sub-micron InSb quantum well cross structure. Presented at: Physics of Semiconductors : 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010. Published in: Ihm, J. and Cheong, H. eds. Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010. AIP Conference Proceedings (1399) Melville, NY: American Institute of Physics, pp. 325-326. 10.1063/1.3666385

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Abstract

We report the low temperature magnetoresistance properties of an InSb quantum well sub‐micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Magnetoresistance ; Quantum wells ; Sensors ; Electron beam lithography
Publisher:	American Institute of Physics
ISBN:	9780735410022
ISSN:	0094-243X
Last Modified:	19 Oct 2022 10:07
URI:	https://orca.cardiff.ac.uk/id/eprint/23299

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