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Number of items: 7.

Smowton, Peter Michael, George, Adrian A., Sandall, Ian C., Hopkinson, M. and Liu, Hui-Yun 2008. Origin of temperature-dependent threshold current in p-doped and undoped in(Ga)As quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 14 (4) , pp. 1162-1170. 10.1109/JSTQE.2008.920040

Smowton, Peter Michael, Sandall, Ian C., Mowbray, D. J., Liu, Hui Yun and Hopkinson, M. 2007. Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 13 (5) , pp. 1261-1266. 10.1109/JSTQE.2007.903375

Smowton, Peter Michael, Sandall, Ian C., Hopkinson, M. and Liu, H.-Y. 2007. Gain in p-doped quantum dot lasers. Journal of Applied Physics 101 (1) , 01310701-01310707. 10.1063/1.2405738
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Sandall, Ian C., Smowton, Peter Michael, Thomson, John Duncan, Baddock, T., Mowbray, D. J., Liu, H.-Y. and Hopkinson, M. 2006. Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters 89 (15) , pp. 15111801-15111803. 10.1063/1.2361167
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Sandall, Ian C. 2006. Characterisation of In(Ga)As quantum dot lasers. PhD Thesis, Cardiff University.
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Smowton, Peter Michael, Sandall, Ian C., Walker, C. L., Thomson, John Duncan, Sobiesierski, Angela, Badcock, T., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 23-26 January 2006. Published in: Mermelstein, C. and Bour, D. P. eds. Novel In-plane Semiconductor Lasers V. Proceedings of SPIE , vol. 6133. Bellingham, WA: SPIE Press, T1330-T1330.

Mermelstein, Carmen, Smowton, Peter Michael, Walker, Craig L., Sandall, Ian C., Sellers, Ian R., Mowbray, David J., Liu, Hui-Yun, Gutierrez, Marina, Hopkinson, Mark and Bour, David P. 2005. Growth and characterization of multiple layer quantum dot lasers. Presented at: Integrated Optoelectronic Devices 2005, San Jose, California, USA, 22-27 January, 2005. Published in: Mermelstein, Carmen and Bour, David P. eds. Novel In-Plane Semiconductor Lasers IV, Proceedings of the Conference held at San Jose, CA, 22 January 2005. SPIE Proceedings Bellingham, WA: SPIE, p. 332. 10.1117/12.593278

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