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Number of items: 4.

Sobiesierski, Angela, Naidu, Deepal and Smowton, Peter Michael 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. Proceedings of SPIE Bellingham, WA: The International Society for Optical Engineering, p. 795306. 10.1117/12.874474

Naidu, Deepal, Smowton, Peter and Summers, Huw David 2010. The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices. Journal of Applied Physics 108 (4) , 043108. 10.1063/1.3471812

Naidu, Deepal 2009. Characterisation of lateral carrier out-diffusion and surface recombination in ridge waveguide devices. PhD Thesis, Cardiff University.

Naidu, Deepal, Mexis, Meletios, Sobiesierski, Angela, Smowton, Peter Michael, Summers, H .D., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, 21-25 October 2007. LEOS 2007. The 20th Annual Meeting of the IEEE. IEEE, pp. 435-436. 10.1109/LEOS.2007.4382465

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