ORCA
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Williams, Ashley, Thornton, J. M. C., MacDonald, John Emyr  ORCID: https://orcid.org/0000-0001-5504-1692, van Silfhout, R., van der Veen, J., Finney, M., Johnson, A. and Norris, C.
1991.
Strain relaxation during the initial stages of growth in Ge/Si(001).
Physical Review B
43
(6)
, pp. 5001-5011.
10.1103/PhysRevB.43.5001
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Thornton, J. M. C., Williams, Ashley, MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, van Silfhout, R.G., van der Veen, J.F., Finney, M. and Norris, C.
1991.
The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001).
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
9
(4)
, pp. 2146-2150.
10.1116/1.585754
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Pluis, B., Gay, J. M., Frenken, J. W. M., Gierlotka, S., Van Der Veen, J. F., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Williams, Ashley, Piggins, N. and Als-Nielsen, J.
1989.
X-ray reflectivity study of surface-initiated melting: Density profile at the pb(110) surface.
Surface Science
222
(2-3)
, L845-L852.
10.1016/0039-6028(89)90354-3
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