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Number of items: 44.

Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Massabuau, Fabien C-P, Kappers, Menno J, Wallis, David J and Oliver, Rachel A 2019. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth 524 , 125167. 10.1016/j.jcrysgro.2019.125167
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Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J. and Oliver, Rachel A. 2019. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth 524 , 125167. 10.1016/j.jcrysgro.2019.125167
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Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Kappers, Menno J, Wallis, David J and Oliver, Rachel A 2019. Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Journal of Applied Physics 125 , 105303. 10.1063/1.5082846
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Angioni, Enrico, Marshall, Ross J., Findlay, Neil J., Bruckbauer, Jochen, Breig, Benjamin, Wallis, David J., Martin, Robert W., Forgan, Ross S. and Skabara, Peter J. 2019. Implementing fluorescent MOFs as down-converting layers in hybrid light-emitting diodes. Journal of Materials Chemistry. C 7 (8) , pp. 2394-2400. 10.1039/C9TC00067D
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Yi, Lok, Frentrup, Martin, Kappers, Menno, Oliver, Rachel, Humphreys, Colin and Wallis, David 2018. Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics 124 , 105302.
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Choi, F S, Griffiths, J T, Ren, Chris, Lee, K B, Zaidi, Z H, Houston, PA, Guiney, I, Humphreys, C J, Oliver, R A and Wallis, D J 2018. Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics 124 (5) , 055702. 10.1063/1.5027680
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Roff, Chris, Bennedikt, J., Tasker, Paul J., Wallis, D.J., Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M. J. and Martin, T. 2018. Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs. Presented at: ARFTG 70th Microwave Measurement Symposium, Tempe, AZ, USA, 27-30 November 2007. 2007 70th ARFTG Microwave Measurement Conference (ARFTG). IEEE, 10.1109/ARFTG.2007.8376173

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., Cheong, J. S., Li, P., Wallis, D. J., Humphreys, C. J., Chalker, P. R. and Houston, P. A. 2018. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics 123 (18) , 184503. 10.1063/1.5027822
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Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Lee, L. Y., Massabuau, F., Sahonta, S. L., Frentrup, M., Shaw, L. J., Wallis, David J., Humphreys, C. J., Oliver, R. A., Binks, D. J. and Dawson, P. 2018. Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics 123 (18) , 185705. 10.1063/1.5026267
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Tang, Fengzai, Lee, Kean B., Guiney, Ivor, Frentrup, Martin, Barnard, Jonathan S., Divitini, Giorgio, Zaidi, Zaffar H., Martin, Tomas L., Bagot, Paul A., Moody, Michael P., Humphreys, Colin J., Houston, Peter A., Oliver, Rachel A. and Wallis, David 2018. Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics 123 (2) , 024902. 10.1063/1.5006255
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Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Miaja, Pablo F., Zaidi, Zaffar H., Qian, Hongtu, Wallis, David, Forsyth, Andrew J., Humphreys, Colin J. and Houston, Peter A. 2017. All-GaN-integrated cascode heterojunction field effect transistors. IEEE Transactions on Power Electronics 32 (11) , pp. 8743-8750. 10.1109/TPEL.2016.2643499
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Mandal, Soumen, Thomas, Evan L. H., Middleton, Callum, Gines, Laia, Griffiths, James T., Kappers, Menno J., Oliver, Rachel A., Wallis, David, Goff, Lucy E, Lynch, Stephen Anthony, Kuball, Martin and Williams, Oliver Aneurin 2017. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2 (10) , p. 7275. 10.1021/acsomega.7b01069
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Rae, K., Foucher, C., Guilhabert, B., Islim, M. S., Yin, L., Zhu, D., Oliver, R. A., Wallis, David, Haas, H., Laurand, N. and Dawson, M. D. 2017. InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass. Optics Express 25 (16) , pp. 19179-19184. 10.1364/OE.25.019179
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Benakaprasad, Bhavana, Eblabla, Abdalla, Li, X., Wallis, David, Guiney, I. and Elgaid, Khaled 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, 10.1109/APMC.2016.7931368

Eblabla, Abdalla Mohamed, Li, Xu, Wallis, David J, Guiney, Ivor and Elgaid, Khaled 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science and Technology 7 (1) , pp. 93-97. 10.1109/TTHZ.2016.2618751
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Benakaprasad, Bhavana, Eblabla, Abdalla, Li, X., Thayne, I., Wallis, David, Guiney, I., Humphreys, C. and Elgaid, Khaled 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, 10.1109/IRMMW-THz.2016.7758488

Jamil, Shahid, Gammon, Tammy, Wallis, David and Fontaine, Michael D. 2016. Standby person for electrical tasks and rescue guidelines for electrical incident victims. Presented at: Petroleum and Chemical Industry Technical Conference (PCIC), Philadelphia, PA, USA, 19-22 Sep 2016. IEEE, 10.1109/PCICON.2016.7589220

Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, David, Guiney, I. and Humphreys, C. J. 2016. Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. Presented at: 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA, 17-21 April 2016. 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE, 4A41-4A45. 10.1109/IRPS.2016.7574529

Wallis, David 2016. The hazards of risk assessment. Presented at: Electrical Safety Workshop (ESW), Jacksonville, FL, USA, 6-11 March 2016. 10.1109/ESW.2016.7499706

Waller, William M., Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J., Guiney, Ivor, Humphreys, Colin J., Pandey, Saurabh, Sonsky, Jan and Kuball, Martin 2016. Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions of Electron Devices 63 (5) , p. 1861. 10.1109/TED.2016.2542588

Miaja, Pablo F., Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Wallis, David J., Humphreys, Colin J., Houston, Peter A. and Forsyth, Andrew J. 2016. Modelling the closely-coupled cascode switching process. Presented at: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 September 2016. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 10.1109/ECCE.2016.7855268

Benakaprasad, Bhavana, Eblabla, Abdalla, Li, X, Thayne, I, Wallis, David, Guiney, I, Humphreys, C and Elgaid, Khaled 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.

Eblabla, Abdalla, Li, X, Wallis, David, Benakaprasad, Bhavana, Guiney, I and Elgaid, Khaled 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.

Elgaid, Khaled, Eblabla, Abdalla, Benakaprasad, Bhavana, Li, X, Thayne, I, Wallis, David, Guiney, I and Humphreys, C 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.

Benakaprasad, Bhavana, Eblabla, Abdalla, Li, X., Thayne, I., Wallis, David J., Guiney, I., Humphreys, C. and Elgaid, Khaled 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Copenhagen, 25-30 September 2016. p. 1. 10.1109/IRMMW-THz.2016.7758488

Eblabla, Abdalla, Li, X, Thayne, I., Wallis, David, Guiney, I. and Elgaid, Khaled 2015. High performance GaN high electron mobility transistors on low resistivity silicon for $X$ -Band Applications. IEEE Electron Device Letters 36 (9) , pp. 899-901. 10.1109/LED.2015.2460120

Waller, William M., Karboyan, Serge, Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J., Guiney, Ivor, Humphreys, Colin J. and Kuball, Martin 2015. Interface state artefact in long gate-length AlGaN/GaN HEMTs. IEEE Transactions of Electron Devices 62 (8) , pp. 2464-2469. 10.1109/TED.2015.2444911

Eblabla, Abdalla, Wallis, David, Guiney, I. and Elgaid, Khaled 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7) , pp. 427-429. 10.1109/LMWC.2015.2429120

Ashley, T., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H, Wallis, David J. and Webber, P. J. 2010. High-performance InSb based quantum well field effect transistors for low-power dissipation applications. Presented at: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA, 7-9 December 2009. 2009 IEEE International Electron Devices Meeting (IEDM). IEEE, p. 1. 10.1109/IEDM.2009.5424207

Janssen, Jochem, Hilton, Keith P., Maclean, Jessica O., Wallis, David J., Powell, Jeff, Uren, Michael, Martin, Trevor, van Heijningen, Marc and van Vliet, Frank 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008, Amsterdam, The Netherlands, 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE, 10.1109/EMICC.2008.4772261

Riedel, G. J., Pomeroy, J. W., Hilton, K.P., Maclean, J.O., Wallis, David J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J. and Kuball, M. 2009. Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers. IEEE Electron Device Letters 30 (2) , pp. 103-106. 10.1109/LED.2008.2010340

Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, David, Uren, M.J., Martin, T. and Kuball, M. 2008. Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices. IEEE Electron Device Letters 29 (5) , pp. 416-418. 10.1109/LED.2008.919779

Radosavljevic, M., Ashley, T., Andreev, A., Coomber, S. D., Dewey, G., Emeny, M. T., Fearn, M., Hayes, D. G., Hilton, K. P., Hudait, M. K., Jefferies, R., Martin, T., Pillarisetty, R., Rachmady, W., Rakshit, T., Smith, S. J., Uren, M. J., Wallis, D. J., Wilding, P. J. and Chau, Robert 2008. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. Presented at: IEEE International Electron Devices Meeting, San Francisco, CA, 15-17 Dec 2008. 10.1109/IEDM.2008.4796798

Sarua, Andrei, Ji, Hangfeng, Hilton, K. P., Wallis, David, Uren, Michael J., Martin, T and Kuball, Martin 2007. Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices. IEEE Transactions of Electron Devices 54 (12) , pp. 3152-3158. 10.1109/TED.2007.908874

Ashley, T., Buckle, L., Emeny, M., Fearn, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Nash, K., Phillips, T., Powell, J., A. Tang, W., Uren, M., Wallis, D., Wilding, P., Datta, S. and Chau, R. 2007. Indium antimonide based quantum well FETs for ultra-high speed electronics. Presented at: 64th Device Research Conference, State College, PA, 26-28 June 2006. p. 201. 10.1109/DRC.2006.305056

Kuball, M., Riedel, G. J., Pomeroy, J. W., Sarua, A., Uren, M. J., Martin, T., Hilton, K. P., Maclean, J. O. and Wallis, David 2007. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Device Letters 28 (2) , pp. 86-89. 10.1109/LED.2006.889215

Ashley, T., Buckle, L., Datta, S., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Martin, T., Phillips, T. J., Wallis, David, Wilding, P. J. and Chau, R. 2007. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications. Electronics letters 43 (14) , 777. 10.1049/el:20071335

Wallis, David 2006. Class F at class B temperatures is it time for a change? Presented at: Conference Record of the 2006 IEEE International Symposium on Electrical Insulation, 2006, Toronto, Ont., Canada, 11-14 June 2006. 10.1109/ELINSL.2006.1665243

Ashley, T., Buckle, L., Emeny, M., Fearn, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Phillips, T., Powell, J., Tang, A., Wallis, D. and Wilding, P. 2006. Indium antimonide based technology for RF applications. Presented at: Compound Semiconductor Integrated Circuit Symposium, San Antonio, TX, 12-15 Nov 2006. 10.1109/CSICS.2006.319918

Uren, M, Hayes, D, Balmer, R, Wallis, D, Hilton, K, Maclean, J, Martin, T, Roff, C, McGovern, P, Benedikt, J and Tasker, P 2006. Control of Short-Channel Effects in GaN/AlGaN HFETs. Presented at: 1st European Microwave Integrated Circuits Conference, Manchester, UK, 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE, p. 65. 10.1109/EMICC.2006.282751

Datta, S., Ashley, T., Brask, J., Buckle, L., Doczy, M., Emeny, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Phillips, T.J., Wallis, D., Wilding, P. and Chau, R. 2005. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications. Presented at: IEEE International Electron Devices Meeting, Washington DC, 5 Dec 2005. Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. IEEE, 10.1109/IEDM.2005.1609466

Wallis, David, Keir, A.M., Emeny, M.T. and Martin, T. 2001. Measurement of III-V quaternary composition using X-ray diffraction. IEE Proceedings Optoelectronics 148 (2) , pp. 97-100. 10.1049/ip-opt:20010442

Wallis, David, Watson, Alan and Mo, Ning 1996. Cardiac neurones of automatic ganglia. Microscopy Research and Technique 35 (1) , pp. 69-79. 10.1002/(SICI)1097-0029(19960901)35:1<69::AID-JEMT6>3.0.CO;2-N

Eblabla, Abdalla, Benakaprasad, Bhavana, Li, Xu, Wallis, David, Guiney, Ivor, Humphreys, Colin and Elgaid, Khaled Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017. Radar Symposium Conference Proceedings. pp. 1-7. 10.23919/IRS.2017.8008166

This list was generated on Thu Oct 17 09:24:11 2019 BST.