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Number of items: 31.

Han, Yu, Ng, Wai Kit, Xue, Ying, Li, Qiang, Wong, Kam Sing and Lau, Kei May 2019. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Optics Letters 44 (4) , pp. 767-770. 10.1364/OL.44.000767
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Rajeev, Ayushi, Shi, Bei, Li, Qiang, Kirch, Jeremy D., Cheng, Micah, Tan, Aaron, Kim, Honghyuk, Oresick, Kevin, Sigler, Chris, Lau, Kei M., Kuech, Thomas F. and Mawst, Luke J. 2019. III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers. physica status solidi (a) 216 (1) , 1800493. 10.1002/pssa.201800493

Zhu, Si, Shi, Bei, Li, Qiang and Lau, Kei May 2018. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon. Applied Physics Letters 113 (22) , 221103. 10.1063/1.5055803
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Vaisman, Michelle, Jain, Nikhil, Li, Qiang, Lau, Kei May, Makoutz, Emily, Saenz, Theresa, McMahon, Willian E., Tamboli, Adele C. and Warren, Emily L. 2018. GaAs solar Ccells on nanopatterned Si substrates. IEEE Journal of Photovoltaics 8 (6) , pp. 1635-1640. 10.1109/JPHOTOV.2018.2871423

Han, Yu, Ng, Wai Kit, Ma, Chao, Li, Qiang, Zhu, Si, Chan, Christopher C. S., Ng, Kar Wei, Lennon, Stephen, Taylor, Robert A., Wong, Kam Sing and Lau, Kei May 2018. Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands. Optica 5 (8) , pp. 918-923. 10.1364/OPTICA.5.000918
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Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si and Lau, Kei May 2018. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands. Nanotechnology 29 (22) , 225601. 10.1088/1361-6528/aab53b
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Zhu, Si, Shi, Bei, Li, Qiang and Lau, Kei May 2018. Room-temperature electrically-pumped 15 ?m InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si. Optics Express 26 (11) , pp. 14514-14523. 10.1364/OE.26.014514
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Shi, Bei, Li, Qiang and Lau, Kei May 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123 (19) , 193104. 10.1063/1.5029255
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Hu, Yaoqiao, Jiang, Huaxing, Lau, Kei May and Li, Qiang 2018. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric. Semiconductor Science and Technology 33 (4) , 045004. 10.1088/1361-6641/aaaa5f
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Hu, Yaoqiao, Yip, Pak San, Tang, Chak Wah, Lau, Kei May and Li, Qiang 2018. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors. Semiconductor Science and Technology 33 (4) , 045005. 10.1088/1361-6641/aaa224
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Shi, Bei, Zhu, Si, Li, Qiang, Wan, Yating, Hu, Evelyn L. and Lau, Kei May 2018. Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon. ACS Photonics 4 (2) , pp. 204-210. 10.1021/acsphotonics.6b00731

Li, Qiang and Lau, Kei May 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63 (4) , pp. 105-120. 10.1016/j.pcrysgrow.2017.10.001
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Han, Yu, Li, Qiang, Zhu, Si, Ng, Kar Wei and Lau, Kei May 2017. Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths. Applied Physics Letters 111 (21) , 212101. 10.1063/1.5005173
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Han, Yu, Li, Qiang, Zhu, Si, Ng, Kar Wei and Lau, Kei May 2017. Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths. Applied Physics Letters 111 (21) , 212101. 10.1063/1.5005173

Li, Qiang, Lai, Billy and Lau, Kei May 2017. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer. Applied Physics Letters 111 (17) , 172103. 10.1063/1.5000100
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Wan, Yating, Jung, Daehwan, Norman, Justin, Shang, Chen, MacFarlane, Ian, Li, Qiang, Kennedy, M. J., Gossard, Arthur C., Lau, Kei May and Bowers, John E. 2017. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express 25 (22) , pp. 26853-26860. 10.1364/OE.25.026853
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Han, Yu, Li, Qiang and Lau, Kei May 2017. Tristate memory cells using double-peaked fin-array III-V tunnel diodes monolithically grown on (001) silicon substrates. IEEE Transactions on Electron Devices 64 (10) , pp. 4078-4083. 10.1109/TED.2017.2738675
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Wan, Yating, Zhang, Zeyu, Chao, Ruilin, Norman, Justin, Jung, Daehwan, Shang, Chen, Li, Qiang, Kennedy, M. J., Liang, Di, Zhang, Chong, Shi, Jin-Wei, Gossard, Arthur C., Lau, Kei May and Bowers, John E. 2017. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express 25 (22) , pp. 27715-27723. 10.1364/OE.25.027715
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Wan, Yating, Norman, Justin, Li, Qiang, Kennedy, M. J., Liang, Di, Zhang, Chong, Huang, Duanni, Zhang, Zeyu, Liu, Alan Y., Torres, Alfredo, Jung, Daehwan, Gossard, Arthur C., Hu, Evelyn L., Lau, Kei May and Bowers, John E. 2017. 1.3  μm submilliamp threshold quantum dot micro-lasers on Si. Optica 4 (8) , pp. 940-944. 10.1364/OPTICA.4.000940
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Han, Yu, Li, Qiang and Lau, Kei May 2017. Fin-array tunneling trigger with tunable hysteresis on (001) silicon substrate. IEEE Electron Device Letters 38 (5) , pp. 556-559. 10.1109/LED.2017.2689027
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Shi, Bei, Zhu, Si, Li, Qiang, Tang, Chak Wah, Wan, Yating, Hu, Evelyn L. and Lau, Kei May 2017. 1.55 lm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si. Applied Physics Letters 110 (12) , 121109. 10.1063/1.4979120
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Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang, Wan, Yating, Liu, Alan Y., Callahan, Patrick G., Echlin, McLean P., Pollock, Tresa M., Lau, Kei May, Gossard, Arthur C. and Bowers, John E. 2017. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express 25 (4) , pp. 3927-3934. 10.1364/OE.25.003927
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Li, Qiang, Jiang, Huaxing and Lau, Kei May 2016. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon. Journal of Crystal Growth 454 , pp. 19-24. 10.1016/j.jcrysgro.2016.08.051
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Han, Yu, Li, Qiang and Lau, Kei May 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37 (6) , pp. 717-720. 10.1109/LED.2016.2552219
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Wan, Yating, Li, Qiang, Liu, Alan Y., Gossard, Arthur C., Bowers, John E., Hu, Evelyn L. and Lau, Kei May 2016. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters 41 (7) , pp. 1664-1667. 10.1364/OL.41.001664
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Wan, Yating, Li, Qiang, Liu, Alan Y., Chow, Weng W., Gossard, Arthur C., Bowers, John E., Hu, Evelyn L. and Lau, Kei May 2016. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates. Applied Physics Letters 108 (22) , 221101. 10.1063/1.4952600
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Li, Qiang, Wan, Yating, Liu, Alan Y., Gossard, Arthur C., Bowers, John E., Hu, Evelyn L. and Lau, Kei May 2016. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express 24 (18) , pp. 21038-21045. 10.1364/OE.24.021038
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Han, Yu, Li, Qiang, Chang, Shih-Pang, Hsu, Wen-Da and Lau, Kei May 2016. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon. Applied Physics Letters 108 (24) , p. 242105. 10.1063/1.4953839
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Li, Qiang, Han, Yu, Lu, Xing and Lau, Kei May 2015. GaAs-InGaAs-GaAs Fin-Array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37 (1) , pp. 24-27. 10.1109/LED.2015.2499603
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Li, Qiang, Ng, Kar Wei and Lau, Kei May 2015. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Applied Physics Letters 106 (7) , 072105. 10.1063/1.4913432
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Li, Qiang, Tang, Chak Wah and Lau, Kei May 2014. Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition. Applied Physics Express 7 (4) , 045502. 10.7567/APEX.7.045502

This list was generated on Tue Mar 26 07:44:52 2019 GMT.