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Online Research @ Cardiff
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Number of items: 16.
Shutts, Samuel, Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M.
2018.
Degradation studies of InAs/GaAs QD lasers grown on Si.
Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference,
Santa Fe, NM, USA,
16-19 September 2018.
2018 IEEE International Semiconductor Laser Conference (ISLC).
IEEE,
pp. 85-86.
10.1109/ISLC.2018.8516178
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Liao, Mengya, Chen, Siming, Liu, Zhixin, Wang, Yi, Ponnampalam, Lalitha, Wu, Jiang, Tang, Mingchu, Shutts, Samuel, Liu, Zizhuo, Smowton, Peter, Yu, Siyuan, Seeds, Alwyn and Liu, Huiyun
2018.
Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon.
Photonics Research
6
(11)
, pp. 1062-1066.
10.1364/PRJ.6.001062
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| Krysa, A. B., Roberts, J. S., Devenson, J., Beanland, R., Karomi, Ivan, Shutts, Samuel and Smowton, Peter Michael 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740 (1) , 012008. 10.1088/1742-6596/740/1/012008 |
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| Chen, Siming, Li, Wei, Wu, Jiang, Jiang, Qi, Tang, Mingchu, Shutts, Samuel, Elliott, Stella, Sobiesierski, Angela, Seeds, Alwyn J., Ross, Ian, Smowton, Peter and Liu, Huiyun 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp. 307-311. 10.1038/nphoton.2016.21 |
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| Orchard, Jonathan R., Shutts, Samuel, Sobiesierski, Angela, Wu, Jiang, Tang, Mingchu, Chen, Siming, Jiang, Qi, Elliott, Stella, Beanland, Richard, Liu, Huiyun, Smowton, Peter Michael and Mowbray, David J. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6) , pp. 6196-6202. 10.1364/OE.24.006196 |
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| Karomi, Ivan, Smowton, Peter Michael, Shutts, Samuel, Krysa, Andrey B. and Beanland, Richard 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21) , pp. 27282-27291. 10.1364/OE.23.027282 |
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| Shutts, Samuel, Elliott, Stella, Smowton, Peter Michael and Krysa, Andrey B. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30 (4) , 044002. 10.1088/0268-1242/30/4/044002 |
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| Shutts, Samuel, Smowton, Peter Michael and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104 (24) , 241106. 10.1063/1.4883857 |
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| Shutts, Samuel, Smowton, Peter Michael and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103 (6) , 061106. 10.1063/1.4817732 |
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| Al-Ghamdi, Mohammed S., Smowton, Peter Michael, Shutts, Samuel, Blood, Peter, Beanland, Richard and Krysa, Andrey B. 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49 (4) , pp. 389-394. 10.1109/JQE.2013.2245496 |
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| Elliott, Stella, Hempel, Martin, Shutts, Samuel, Zeimer, Ute, Smowton, Peter Michael and Tomm, Jens W. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII, San Francisco, USA, 4-7 February 2013. Published in: Belyanin, Alexey A. and Smowton, Peter eds. Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE , vol. 8640. Bellingham: SPIE, 86401H. 10.1117/12.2008319 |
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Shutts, Samuel
2012.
Monolithic dual-wavelength InP/AlGaInP quantum dot lasers.
PhD Thesis,
Cardiff University.
Item availability restricted. |
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| Smowton, Peter Michael, Elliott, Stella N., Shutts, Samuel, Michell, G., Al-Ghamdi, S. M. and Krysa, A. B, 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011. CLEO: Science and Innovations 2011. CFL1. 10.1364/CLEO_SI.2011.CFL1 |
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| Smowton, Peter Michael, Elliott, Stella, Shutts, Samuel, Al-Ghamdi, M. and Krysa, A. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17 (5) , pp. 1343-1348. 10.1109/JSTQE.2011.2115235 |
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| Shutts, Samuel, Edwards, Gareth, Elliott, Stella, Smowton, Peter Michael and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. SPIE Proceedings , vol. 7953. Bellingham, WA: IEEE, p. 795308. 10.1117/12.876454 |
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| Smowton, Peter Michael, Al-Ghamdi, M., Shutts, Samuel, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245 |
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