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Number of items: 20.

Shutts, Samuel, Allford, Craig P., Spinnler, Clemens, Li, Zhibo, Sobiesierski, Angela, Tang, Mingchu, Liu, Huiyun and Smowton, Peter M. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900406. 10.1109/JSTQE.2019.2915994
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Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David, Shutts, Samuel, Li, Zhibo, Tang, Mingchu, Liu, Huiyun, Smowton, Peter M. and Abadia, Nicolás 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019. -.
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Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David, Shutts, Samuel, Li, Zhibo, Tang, Mingchu, Liu, Huiyun, Samani, Alireza, Smowton, Peter M. and Abadia, Nicolas 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 2019.
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Li, Zhibo, Shutts, Samuel, Allford, Craig P., Krysa, Andrey B. and Smowton, Peter M. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America, SM3N.6. 10.1364/CLEO_SI.2019.SM3N.6
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Shutts, Samuel, Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE, pp. 85-86. 10.1109/ISLC.2018.8516178
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Liao, Mengya, Chen, Siming, Liu, Zhixin, Wang, Yi, Ponnampalam, Lalitha, Wu, Jiang, Tang, Mingchu, Shutts, Samuel, Liu, Zizhuo, Smowton, Peter, Yu, Siyuan, Seeds, Alwyn and Liu, Huiyun 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11) , pp. 1062-1066. 10.1364/PRJ.6.001062
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Krysa, A. B., Roberts, J. S., Devenson, J., Beanland, R., Karomi, Ivan, Shutts, Samuel and Smowton, Peter Michael 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740 (1) , 012008. 10.1088/1742-6596/740/1/012008
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Chen, Siming, Li, Wei, Wu, Jiang, Jiang, Qi, Tang, Mingchu, Shutts, Samuel, Elliott, Stella, Sobiesierski, Angela, Seeds, Alwyn J., Ross, Ian, Smowton, Peter and Liu, Huiyun 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp. 307-311. 10.1038/nphoton.2016.21

Orchard, Jonathan R., Shutts, Samuel, Sobiesierski, Angela, Wu, Jiang, Tang, Mingchu, Chen, Siming, Jiang, Qi, Elliott, Stella, Beanland, Richard, Liu, Huiyun, Smowton, Peter Michael and Mowbray, David J. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6) , pp. 6196-6202. 10.1364/OE.24.006196

Karomi, Ivan, Smowton, Peter Michael, Shutts, Samuel, Krysa, Andrey B. and Beanland, Richard 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21) , pp. 27282-27291. 10.1364/OE.23.027282
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Shutts, Samuel, Elliott, Stella, Smowton, Peter Michael and Krysa, Andrey B. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30 (4) , 044002. 10.1088/0268-1242/30/4/044002
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Shutts, Samuel, Smowton, Peter Michael and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104 (24) , 241106. 10.1063/1.4883857
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Shutts, Samuel, Smowton, Peter Michael and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103 (6) , 061106. 10.1063/1.4817732
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Al-Ghamdi, Mohammed S., Smowton, Peter Michael, Shutts, Samuel, Blood, Peter, Beanland, Richard and Krysa, Andrey B. 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49 (4) , pp. 389-394. 10.1109/JQE.2013.2245496

Elliott, Stella, Hempel, Martin, Shutts, Samuel, Zeimer, Ute, Smowton, Peter Michael and Tomm, Jens W. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII, San Francisco, USA, 4-7 February 2013. Published in: Belyanin, Alexey A. and Smowton, Peter eds. Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE , vol. 8640. Bellingham: SPIE, 86401H. 10.1117/12.2008319

Shutts, Samuel 2012. Monolithic dual-wavelength InP/AlGaInP quantum dot lasers. PhD Thesis, Cardiff University.
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Smowton, Peter Michael, Elliott, Stella N., Shutts, Samuel, Michell, G., Al-Ghamdi, S. M. and Krysa, A. B, 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011. CLEO: Science and Innovations 2011. CFL1. 10.1364/CLEO_SI.2011.CFL1

Smowton, Peter Michael, Elliott, Stella, Shutts, Samuel, Al-Ghamdi, M. and Krysa, A. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17 (5) , pp. 1343-1348. 10.1109/JSTQE.2011.2115235

Shutts, Samuel, Edwards, Gareth, Elliott, Stella, Smowton, Peter Michael and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. SPIE Proceedings , vol. 7953. Bellingham, WA: IEEE, p. 795308. 10.1117/12.876454

Smowton, Peter Michael, Al-Ghamdi, M., Shutts, Samuel, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245

This list was generated on Sun Dec 15 05:19:44 2019 GMT.