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Number of items: 32.

Yang, Junjie, Liu, Zizhuo, Jurczak, Pamela, Tang, Mingchu, Li, Keshuang, Pan, Shujie, Sanchez, Ana, Beanland, Richard, Zhang, Jin-Chuan, Wang, Huan, Liu, Fengqi, Li, Zhibo, Shutts, Samuel, Smowton, Peter, Chen, Siming, Seeds, Alwyn and Liu, Huiyun 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54 (3) , 035103. 10.1088/1361-6463/abbb49

Li, Zhibo, Allford, Craig P., Shutts, Samuel, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana and Smowton, Peter M. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17) , pp. 1073-1076.

Alharbi, Reem, Li, Zhibo, Allford, Craig P., Shutts, Samuel, Krysa, Andrey B. and Smowton, Peter 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

Li, Zhibo, Shutts, Samuel, Allford, Craig P., Shi, Bei, Luo, Wei, Lau, Kei May and Smowton, Peter M. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908479

Li, Zhibo, Shutts, Samuel, Allford, Craig P., Krysa, Andrey B. and Smowton, Peter M. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908334

Shutts, Samuel, Allford, Craig P., Spinnler, Clemens, Li, Zhibo, Sobiesierski, Angela, Tang, Mingchu, Liu, Huiyun and Smowton, Peter M. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900406. 10.1109/JSTQE.2019.2915994

Zaouris, D., Powell, D., Knapp, M., Haji, M., Gill, P., Shutts, Samuel, Smowton, Peter M., Eddie, I., McKee, A. and Meredith, W. 2019. MacV: VCSELs for miniature atomic clocks. Presented at: 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), Orlando, FL, USA, 14-18 April 2019. 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). IEEE, p. 1. 10.1109/FCS.2019.8856005

Jarvis, Lydia, Maglio, Benjamin, Allford, Craig, Li, Zhibo, Shutts, Samuel, Deng, Huiwen, Cheng, Siming, Tang, Mingchu, Liu, Huiyun and Smowton, Peter 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

Allford, Craig, Li, Zhibo, Shutts, Samuel, Shi, B., Luo, W., Lau, Kei May and Smowton, Peter 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.

Allford, Craig P., Li, Zhibo, Shutts, Samuel, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana and Smowton, Peter 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.

Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David, Shutts, Samuel, Li, Zhibo, Tang, Mingchu, Liu, Huiyun, Samani, Alireza, Smowton, Peter M. and Abadia, Nicolas 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 2019.

Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David, Shutts, Samuel, Li, Zhibo, Tang, Mingchu, Liu, Huiyun, Smowton, Peter M. and Abadia, Nicolás 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019. -.

Li, Zhibo, Shutts, Samuel, Allford, Craig, Shi, Bei, Lua, Wei, Lau, Kei May and Smowton, Peter 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.

Li, Zhibo, Allford, Craig P, Shutts, Samuel, Krysa, Andrey B. and Smowton, Peter 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.

Li, Zhibo, Shutts, Samuel, Allford, Craig P., Krysa, Andrey B. and Smowton, Peter M. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America, SM3N.6. 10.1364/CLEO_SI.2019.SM3N.6

Shutts, Samuel, Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE, pp. 85-86. 10.1109/ISLC.2018.8516178

Liao, Mengya, Chen, Siming, Liu, Zhixin, Wang, Yi, Ponnampalam, Lalitha, Wu, Jiang, Tang, Mingchu, Shutts, Samuel, Liu, Zizhuo, Smowton, Peter, Yu, Siyuan, Seeds, Alwyn and Liu, Huiyun 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11) , pp. 1062-1066. 10.1364/PRJ.6.001062

Allford, Craig P., Gillgrass, Sara-Jayne, Al-Ghamdi, Mohammed S., Krysa, Andrey B., Shutts, Samuel and Smowton, Peter 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018), Sheffield, UK, 4-5 July 2018.

Krysa, A. B., Roberts, J. S., Devenson, J., Beanland, R., Karomi, Ivan, Shutts, Samuel and Smowton, Peter Michael 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740 (1) , 012008. 10.1088/1742-6596/740/1/012008

Chen, Siming, Li, Wei, Wu, Jiang, Jiang, Qi, Tang, Mingchu, Shutts, Samuel, Elliott, Stella N., Sobiesierski, Angela, Seeds, Alwyn J., Ross, Ian, Smowton, Peter M. and Liu, Huiyun 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp. 307-311. 10.1038/nphoton.2016.21

Orchard, Jonathan R., Shutts, Samuel, Sobiesierski, Angela, Wu, Jiang, Tang, Mingchu, Chen, Siming, Jiang, Qi, Elliott, Stella, Beanland, Richard, Liu, Huiyun, Smowton, Peter Michael and Mowbray, David J. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6) , pp. 6196-6202. 10.1364/OE.24.006196

Karomi, Ivan, Smowton, Peter Michael, Shutts, Samuel, Krysa, Andrey B. and Beanland, Richard 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21) , pp. 27282-27291. 10.1364/OE.23.027282

Shutts, Samuel, Elliott, Stella, Smowton, Peter Michael and Krysa, Andrey B. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30 (4) , 044002. 10.1088/0268-1242/30/4/044002

Shutts, S., Smowton, P. M. and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104 (24) , 241106. 10.1063/1.4883857

Shutts, Samuel, Smowton, Peter Michael and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103 (6) , 061106. 10.1063/1.4817732

Al-Ghamdi, Mohammed S., Smowton, Peter Michael, Shutts, Samuel, Blood, Peter, Beanland, Richard and Krysa, Andrey B. 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49 (4) , pp. 389-394. 10.1109/JQE.2013.2245496

Elliott, Stella, Hempel, Martin, Shutts, Samuel, Zeimer, Ute, Smowton, Peter Michael and Tomm, Jens W. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII, San Francisco, USA, 4-7 February 2013. Published in: Belyanin, Alexey A. and Smowton, Peter eds. Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE , vol. 8640. Bellingham: SPIE, 86401H. 10.1117/12.2008319

Shutts, Samuel 2012. Monolithic dual-wavelength InP/AlGaInP quantum dot lasers. PhD Thesis, Cardiff University.
Item availability restricted.

Smowton, Peter Michael, Elliott, Stella N., Shutts, Samuel, Michell, G., Al-Ghamdi, S. M. and Krysa, A. B, 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011. CLEO: Science and Innovations 2011. CFL1. 10.1364/CLEO_SI.2011.CFL1

Smowton, Peter Michael, Elliott, Stella, Shutts, Samuel, Al-Ghamdi, M. and Krysa, A. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17 (5) , pp. 1343-1348. 10.1109/JSTQE.2011.2115235

Shutts, Samuel, Edwards, Gareth, Elliott, Stella, Smowton, Peter Michael and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011. Published in: Belyanin, A. and Smowton, Peter Michael eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. SPIE Proceedings , vol. 7953. Bellingham, WA: IEEE, p. 795308. 10.1117/12.876454

Smowton, Peter Michael, Al-Ghamdi, M., Shutts, Samuel, Edwards, G., Hutchings, Matthew and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2) , pp. 88-90. 10.1109/LPT.2009.2036245

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