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Number of items: 23.

Li, Zhibo, Allford, Craig P., Shutts, Samuel, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana and Smowton, Peter M. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17) , pp. 1073-1076.
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Alharbi, Reem, Li, Zhibo, Allford, Craig P., Shutts, Samuel, Krysa, Andrey B. and Smowton, Peter 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.
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Li, Zhibo, Shutts, Samuel, Allford, Craig P., Shi, Bei, Luo, Wei, Lau, Kei May and Smowton, Peter M. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908479
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Li, Zhibo, Shutts, Samuel, Allford, Craig P., Krysa, Andrey B. and Smowton, Peter M. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908334
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Shutts, Samuel, Allford, Craig P., Spinnler, Clemens, Li, Zhibo, Sobiesierski, Angela, Tang, Mingchu, Liu, Huiyun and Smowton, Peter M. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900406. 10.1109/JSTQE.2019.2915994
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Jarvis, Lydia, Maglio, Benjamin, Allford, Craig, Li, Zhibo, Shutts, Samuel, Deng, Huiwen, Cheng, Siming, Tang, Mingchu, Liu, Huiyun and Smowton, Peter 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.
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Allford, Craig P., Li, Zhibo, Shutts, Samuel, Forrest, Adam F., Alharbi, Reem, Krysa, Andrey B., Cataluna, Maria Ana and Smowton, Peter 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
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Li, Zhibo, Shutts, Samuel, Allford, Craig, Shi, Bei, Lua, Wei, Lau, Kei May and Smowton, Peter 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
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Li, Zhibo, Allford, Craig P, Shutts, Samuel, Krysa, Andrey B. and Smowton, Peter 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
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Allford, Craig, Li, Zhibo, Shutts, Samuel, Shi, B., Luo, W., Lau, Kei May and Smowton, Peter 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
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Li, Zhibo, Shutts, Samuel, Allford, Craig P., Krysa, Andrey B. and Smowton, Peter M. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America, SM3N.6. 10.1364/CLEO_SI.2019.SM3N.6
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Shutts, Samuel, Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE, pp. 85-86. 10.1109/ISLC.2018.8516178
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McIndo, Christopher, Hayes, David, Papageorgiou, Andreas, Hanks, L. A., Smith, George, Allford, Craig, Zhang, S, Clarke, E. M. and Buckle, Philip 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964 , 012005. 10.1088/1742-6596/964/1/012005
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McIndo, Christopher J., Hanks, Laura A., Smith, George V., Allford, Craig, Zhang, Shiyong, Clarke, Edmund M. and Buckle, Philip 2018. Advances in electron transport in InSb/AlxIn1-xSb quantum wells. Presented at: International Symposium on Quantum Hall Effects and Related Topics (QHE2018), Max Planck Institute for Solid State Research, Stuttgart, Germany, 27-29 June 2018.
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Allford, Craig P., Gillgrass, Sara-Jayne, Al-Ghamdi, Mohammed S., Krysa, Andrey B., Shutts, Samuel and Smowton, Peter 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018), Sheffield, UK, 4-5 July 2018.
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Allford, Craig P. and Buckle, Philip D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7 (6) , pp. 772-779. 10.1109/TTHZ.2017.2758266
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McIndo, Christopher J., Hayes, David G., Papageorgiou, Andreas, Hanks, Laura A., Smith, George V., Allford, Craig P., Zhang, Shiyong, Clarke, Edmund M. and Buckle, Philip D. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91 , pp. 169-172. 10.1016/j.physe.2017.04.019
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Hayes, D. G., Allford, C. P., Smith, G. V., McIndo, C., Hanks, L A, Gilbertson, A M, Cohen, L F, Zhang, S, Clarke, E M and Buckle, P. D. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32 , 085002. 10.1088/1361-6641/aa75c8
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Smith, George V., Hayes, David G., Allford, Craig P., Zhang, Shiyong, Clarke, Edmund M. and Buckle, Philip 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17), State College, PA, USA, 31 July - 4 August 2017.
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Allford, Craig 2016. Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. PhD Thesis, Cardiff University.
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Allford, C. P., Legg, R. E., O'Donnell, R. A., Dawson, P., Missous, M. and Buckle, P. D. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30 (10) , 105035. 10.1088/0268-1242/30/10/105035
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Allford, Craig P., Legg, Robert E., O'Donnell, Rebecca A., Dawson, P., Missous, M. and Buckle, Philip D. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures. Presented at: UK Semiconductor Conference 2014 (UKSC 2014), Sheffield, UK,
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Allford, Craig P., Buckle, Philip D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015, Smolenice, Slovakia, 8-10 June 2015.
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This list was generated on Thu Oct 22 04:00:00 2020 BST.