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Number of items: 15.

Anyebe, Ezekiel Anyebe and Kesaria, Manoj 2020. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 10.1002/nano.202000142

Anyebe, Ezekiel 2020. Recent progress on the gold-free integration of Ternary III−as antimonide nanowires directly on Silicon. Nanomaterials 10 (10) , 2064. 10.3390/nano10102064

Anyebe, Ezekiel A., Kesaria, Manoj, Sanchez, A. M. and Zhuang, Qiandong 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126 (6) , 427. 10.1007/s00339-020-03609-z
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Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9 , 17665. 10.1038/s41598-019-54047-8

Li, Handong, Alradhi, Hayfaa, Jin, Zhiming, Anyebe, Ezekiel A., Sanchez, Ana M., Linhart, Wojcioech M., Kudrawiec, Robert, Fang, Hehai, Wang, Zhiming, Hu, Weida and Zhuang, Qiandong 2018. Novel type-II InAs/AlSb core-shell nanowires and their enhanced negative photocurrent for efficient photodetection. Advanced Functional Materials 28 (8) , 1705382. 10.1002/adfm.201705382

Anyebe, Ezekiel A. 2017. Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon. Applied Nanoscience 7 (7) , pp. 365-370. 10.1007/s13204-017-0585-8

Anyebe, Ezekiel A., Sandall, I., Jin, Z. M., Sanchez, Ana M., Rajpalke, Mohana K., Veal, Timothy D., Cao, Y. C., Li, H. D., Harvey, R. and Zhuang, Q. D. 2017. Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports 7 , 46110. 10.1038/srep46110

Anyebe, E. A., Sanchez, A. M., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B. J., Kolosov, O., Anderson, F., Sundaram, R., Wang, Z. M., Falko, V. and Zhuang, Q. 2015. Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite. Nano Letters 15 (7) , pp. 4348-4355. 10.1021/acs.nanolett.5b00411

Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M. and Zhuang, Q. D. 2015. Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires. Nano Research 8 (4) , pp. 1309-1319. 10.1007/s12274-014-0621-x

Zhuang, Q. D., Anyebe, Ezekiel A., Chen, R., Liu, H., Sanchez, Ana M., Rajpalke, Mohana K., Veal, Tim D., Wang, Z. M., Huang, Y. Z. and Sun, H. D. 2015. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters 15 (2) , pp. 1109-1116. 10.1021/nl5040946

Anyebe, E. A. and Zhuang, Q. 2014. Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates. Materials Research Bulletin 60 , pp. 572-575. 10.1016/j.materresbull.2014.09.028

Anyebe, E. A., Zhuang, Q., Sanchez, A. M., Lawson, S., Robson, A. J., Ponomarenko, L., Zhukov, A. and Kolosov, O. 2014. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters 8 (7) , pp. 658-662. 10.1002/pssr.201409106

Zhuang, Qian D, Anyebe, Ezekiel A, Sanchez, Ana M, Rajpalke, Mohana K, Veal, Tim D, Zhukov, Alexander, Robinson, Benjamin J, Anderson, Frazer, Kolosov, Oleg and Fal?ko, Vladimir 2014. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters 9 (1) , 321. 10.1186/1556-276X-9-321

Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29 (8) , 085010. 10.1088/0268-1242/29/8/085010

Anyebe, E. A. and Zhuang, Q. 2013. Heteroepitaxial growth of free?standing InAs nanowires on graphite for flexible devices. Presented at: 22nd European Workshop on Heterostructure Technology (HETECH), University of Glasgow, Scotland, 9 - 11 September 2013.

This list was generated on Mon Jan 18 04:05:56 2021 GMT.