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application/pdfIEEEIEEE Transactions on Electron Devices;2018;65;12;10.1109/TED.2018.2872513Active harmonic load–pullcurrent collapsegallium nitride (GaN)heterojunction field-effect transistor (HFET)high-electron mobility transistorkink effectknee walkoutpulsed <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">I</italic>–<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V</italic>trapping effectEvaluation of Pulsed <italic>I</italic>–<italic>V</italic> Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETsHassan HirshyManikant SinghMichael A. CasbonRichard M. PerksMichael J. UrenTrevor MartinMartin KuballPaul J. Tasker
IEEE Transactions on Electron Devices5307 Dec. 2018126510.1109/TED.2018.28725135313
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