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Consecutive junction-induced efficient charge separation mechanisms for high-performance MoS2/quantum dot phototransistors

Pak, Sangyeon, Cho, Yuljae, Hong, John, Lee, Juwon, Lee, Sanghyo, Hou, Bo, An, Geon-Hyoung, Lee, Young-Woo, Jang, Jae Eun, Im, Hyunsik, Morris, Stephen M., Sohn, Jung Inn, Cha, SeungNam and Kim, Jong Min 2018. Consecutive junction-induced efficient charge separation mechanisms for high-performance MoS2/quantum dot phototransistors. ACS Applied Materials and Interfaces 10 (44) , pp. 38264-38271. 10.1021/acsami.8b14408

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Phototransistors that are based on a hybrid vertical heterojunction structure of two-dimensional (2D)/quantum dots (QDs) have recently attracted attention as a promising device architecture for enhancing the quantum efficiency of photodetectors. However, to optimize the device structure to allow for more efficient charge separation and transfer to the electrodes, a better understanding of the photophysical mechanisms that take place in these architectures is required. Here, we employ a novel concept involving the modulation of the built-in potential within the QD layers for creating a new hybrid MoS2/PbS QDs phototransistor with consecutive type II junctions. The effects of the built-in potential across the depletion region near the type II junction interface in the QD layers are found to improve the photoresponse as well as decrease the response times to 950 μs, which is the faster response time (by orders of magnitude) than that recorded for previously reported 2D/QD phototransistors. Also, by implementing an electric-field modulation of the MoS2 channel, our experimental results reveal that the detectivity can be as large as 1 × 1011 jones. This work demonstrates an important pathway toward designing hybrid phototransistors and mixed-dimensional van der Waals heterostructures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 1944-8244
Date of First Compliant Deposit: 24 February 2020
Date of Acceptance: 8 October 2018
Last Modified: 24 Feb 2020 15:29

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